Temperature characteristics of Gate all around nanowire channel Si-TFET
نویسندگان
چکیده
منابع مشابه
Representation of the temperature nano-sensors via cylindrical gate-all-around Si-NW-FET
In this paper, the temperature dependence of some characteristics of cylindrical gate-all-around Si nanowire field effect transistor (GAA-Si-NWFET) is investigated to representing the temperature nano-sensor structures and improving their performance. Firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of GAA-Si-NWFET to propose the temperatu...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2021
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1755/1/012045